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| HMC-ALH369 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Features Excellent Noise Figure: 2.0 dB Gain: 22 dB P1dB Output Power: +11 dBm Supply Voltage: +5V @ 66 mA Die Size: 2.10 x 1.37 x 0.1 mm Typical Applications This HMC-ALH369 is ideal for: * Point-to-Point Radios * Point-to-Multi-Point Radios AMPLIFIERS - LOW NOISE - CHIP * Phased Arrays * VSAT * SATCOM Functional Diagram General Description The HMC-ALH369 is a GaAs MMIC HEMT three stage, self-biased Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 22 dB of gain, from a single bias supply of +5V @ 66 mA with a noise figure of 2 dB. The HMC-ALH369 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (2.88 mm2). Electrical Specifi cations [1], TA = +25 C, Vdd= +5V, Idd = 66mA Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Supply Current (Idd) 9 20 Min. Typ. 24 - 32 22 2 12 12 11 66 9 2.5 15 Max. Min. Typ. 32 - 40 17 2.1 8 12 11 66 2.5 Max. Units GHz dB dB dB dB dBm mA [1] Unless otherwise indicated, all measurements are from probed die 0 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH369 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Note: Measured Performance Characteristics (Typical Performance at 25C) Vd= 5V, Id = 66 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 - 31 AMPLIFIERS - LOW NOISE - CHIP HMC-ALH369 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Absolute Maximum Ratings Drain Bias Voltage RF Input Power (24 - 32 GHz) RF Input Power (32 - 40 GHz) Channel Temperature +5.5 Vdc 5 dBm -1 dBm 180 C -65 to +150 C -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - LOW NOISE - CHIP Storage Temperature Operating Temperature Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" 0 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
Price & Availability of HMC-ALH369
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